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	题名	作者	年代	出处	被引量
1	Performance limiting micropipe defects in silicon carbide wafers 显示文摘	NEUDECK P G POWELL J A	1994	IEEE Electron Device Lett1994，15，：	2
2	Noise as a diagnostic tool for quality and reliability of electronic devices 显示文摘	Vandanmme L K J	1994	IEEE Transacions on Electron Devices1994，41，：	2
3	A study on the photoresponses in GaAs n-channel optical detectors显示文摘	WEI C J KLEIN H J	1982	IEEE Transactions on Electron Devices1982，29，9：	2
4	A nonfundamental theory of low-frequency noise in semiconductor devices 显示文摘	Saeed Mohammadi Dimitris Pavlidis	2000	IEEE Transactions on Electron Devices2000，47，：	2
5	Accelerated Life Testing and Failure Analysis of Single Stage MMIC Amplifier 显示文摘	Keith A Jason A	1994	IEEE Trans Electron Devices1994，41，8：	2
6	1800V NPN Bipolar Junction Transistors in 4H-SiC显示文摘	Ryu S H Agarwal A K Singh R	2001	IEEE Electron Device Letter2001，22，2：	2
7	Low Voltage hybrid bulk/SOI CMOS active pixel image sensor显示文摘	Chen Xu Zhang Weiquan Mansun Chan	2001	IEEE Electron Devices2001，22，5：	2
8	High-voltage planar junctions investigated by the OBIC method 显示文摘	Stengl R	1987	IEEE Transactions on Electron Devices1987，34，4：	2
9	Computer-aided two-dimensional analysis of bipolar transistors 显示文摘	Slotboom J W	1984	IEEE Trans on Electronic Devices1984，20，8：	2
10	Determination of the spatial variation of the carrier lifetime in a proton-irradiated Si n+-n-p+diode by optical-beam-induced currrent measurements 显示文摘	Flohr T Reinhard H	1990	IEEE Transactions on Electron Devices1990，37，9：	2
11	A rapid-response,high-sensitivity nanophase humidity sensor for respiratory monitoring 显示文摘	Kalkan A K Li Handong O'Brien C J	2004	Electron Device Letters IEEE2004，25，8：	1
12	40-Gbit/s OEIC on GaAs substrate through metamorphic buffer technology显示文摘	Zhang Y Whelan C S Leoni R	2003	IEEE Electron Device Lett2003，24，9：	1
13	Room-temperature single-electron memory 显示文摘	Yano K Ishii T Hasimoto T Kobayashi F	1994	IEEE Transactions on Electron Devices1994，41，9：	1
14	Gate Oxide Damage Reduction Using a Protective Dielectric Layer显示文摘	Gabriel C T Weling M G	1994	IEEE Electron Device Letter1994，15，8：	1
15	A shortchannel DC SPICE model for polysilicon thin-film transistors including temperature effects 显示文摘	Jacunski M D Shur M S Owusu A A	1999	IEEE Transactions on Electron Devices1999，46，6：	1
16	Efficiency and power density potential of combustion-driven thermophotovoltaic systems using GaSb Photovoltaic Cells显示文摘	Zenker M	2001	IEEE Transactions on Electron Devices2001，48，2：	1
17	Continuous analytic Ⅰ-Ⅴ model for surrounding-gate MOSFETs显示文摘	JIMENEZ D SUNE J MARSAL L F	2004	IEEE Electron Devices Letters2004，25，8：	1
18	Characterizations of recessed gate AlGaN/GaN HEMTs on sapphire显示文摘	EGAWA T ZHAO G Y ISHIKAWA H	2001	IEEE Transactions on Electron Devices2001，48，3：	1
19	Linearizability of TWT as using predistortion techniques显示文摘	Qiu J X	2005	IEEE Transactions on Electron Devices2005，52，5：	1
20	Short-channel effect limitations on high-frequency operation of A1GaN/ GaN HEMTs for T-gate devices 显示文摘	Jessen G H Fitch R C Gillespie J K	2007	IEEE Transactions on Electron Devices2007，54，10：	1

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