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		题名	作者	年代	出处	被引量
	1	First-Principles Studies for Magnetism in Cu-Doped GaN显示文摘Hole carrier mediated magnetization in Cu-doped GaN is investigated by using the first-principles calculations.By studying the sp-d interaction and the direct exchange interaction among the dopants,we obtain an equation to determine the spontaneous magnetization as a function of the Cu dopant concentration and the hole carrier density.It is demonstrated that nonmagnetic Cu doped GaN can be of room-temperature ferromagnetism.The system's Curie temperature Tc can reach about 345 K with Cu concentration of 1.0% and hole carrier density of 5.0×1019 cm-3.The results are in good agreement with experimental observations and indicate that ferromagnetism in this systems is tunable by controlling the Cu concentration and the hole carrier density.	YANG Qin SUN Fang TANG Zheng	2011	Wuhan University Journal of Natural Sciences2011，16，3：	0

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