Miscibility Calculation of GaN1-xPx Ternary Alloys

查看全文 作　　者：Zhang Kaixiao Chen Dunjun Zhu Weihua Lin Jianwei Zhang Rong Zheng [1,2]Youdou 机构地区：[1]College of Science, Hohai University, Nanjing 210098, China;[2]Department of Physics, Nanjing University, Nanjing 210093, China Department of Physics, Nanjing University, Nanjing 210093, China College of Science, Hohai University, Nanjing 210098, China College of Science, Hohai University, Nanjing 210098, China Department of Physics, Nanjing University, Nanjing 210093, China Department of Physics, Nanjing University, Nanjing 210093, China; 出　　处：《Journal of Rare Earths》索引2006年第24卷第z1期,共4页 基　　金：Project supported by the National Natural Science Foundation of China (60406002, 60325413 and 60136020), the Natural Science Foundation of Jiangsu Province (BK2003411) 摘　　要：A theoretical calculation of the miscibility gap with considering the mismatch strain and elastic parameters was performed for the GaN1-xPx ternary alloys on (0001) GaN/sapphire substrates based on the strictly regular solution model. The calculated results show that the boundary of the spinodal isotherm shifts from x=0.06 to x=0.25 at the growth temperature of 1200 K as the strain factor increases from 0 to 1, indicating that the strain in the GaN1-xPx layers can suppress the phase separation. Meanwhile, with the increase of the effective elastic parameters of GaN and GaP, the available maximum P content also increases slightly at the growing temperature. 关 键 词：GaN1-xPx TERNARY ALLOYS MISCIBILITY STRAIN