Principle and Process Window of Cerium Dioxide Thin Film Fabrication with Dual Plasma Deposition

查看全文 作　　者：L.P. Wang;B. Y Tang;X.B. Tian;YX.Leng;Q. YZhang and P.K.Chu Department of Physics and Materials Science, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, China

出　　处：《Journal of Materials Science & Technology》索引2001年第17卷第1期,共2页

基　　金：The work was supported by Hong Kong RGC CERG9040344 and 9040412, RGC / Germany Joint Schemes9050084 and 9050150, and CityU S 摘　　要：Cerium dioxide, CeO2, is a potentially superior material in a myriad of areas, and many methods have been proposed to deposit single crystal CeO2 thin films. A novel fabrication technique utilizing dual plasma generated by metal vacuum arc (MEVVA) and radio frequency (RF) is discussed in this paper. We have recently conducted a systematic investigation to determine the optimal process window to deposit CeO2 thin films’on Si(100) substrates. The X-ray diffraction results show the existence of CeO2(100) in the as-deposited sample. 关键词：Thin Window Principle and Process Window of Cerium Dioxide Thin Film Fabrication with Dual Plasma Deposition

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Principle and Process Window of Cerium Dioxide Thin Film Fabrication with Dual Plasma Deposition

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