Laser-assisted deposition of Cu bumps for microelectronic packaging

查看全文 作　　者：Won-Seok [1]CHOI;Joohan [2]KIM

机构地区：[1]Department of Nano IT Fusion Program,Seoul National University of Science and Technology;[2]Department of Mechanical and Automotive Engineering,Seoul National University of Science and Technology

出　　处：《中国有色金属学会会刊:英文版》索引2012年第22卷第S3期,共5页

基　　金：Project(2012-0001900)supported by the National Research Foundation of Korea 摘　　要：Cu bump was transferred using a focused laser pulse for microelectronic packaging.An Nd:YAG laser pulse (maximum energy of 500 mJ;wavelength of 1064 nm;fluences of 0.4-2.1 kJ/cm2) was irradiated on a sacrificial absorption layer with copper coating.The focused laser beam induced plasma between the semi-transparent donor slide and the sacrificial layer,causing a shock wave.The shock wave pressure pushed the Cu layer and transferred material to deposit a bump on substrate.A beam-shaper was used to produce uniform pressure at the interface to reduce fragmentation of the transferred material on the substrate.The calculated shock wave pressure with respect to laser fluence was 1-3 GPa.A Cu bump of diameter of 200 μm was successfully deposited at laser fluence of 0.6 kJ/cm 2.The pressure control at the sacrificial layer using a laser pulse was critical to produce a bump with less fragmentation.The technique can be applied to forming Cu bump for an interconnecting process in electronics. 关键词：LASER induced FORWARD transfer BUMP deposition ND:YAG PULSED LASER micro system packaging beam SHAPING

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Laser-assisted deposition of Cu bumps for microelectronic packaging

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