Valence band structure of strained Si/(111)Si_(1-x)Ge_x

查看全文 作　　者：SONG JianJun, ZHANG HeMing, HU HuiYong, DAI XianYing & XUAN RongXi Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi’an 710071, China

出　　处：《Science China(Physics,Mechanics & Astronomy)》索引2010年第53卷第3期,共4页

基　　金：supported by the National Ministries and Commissions (Grant Nos. 51308040203, 9140A08060407DZ0103, and 6139801) 摘　　要：The strained Si techique has been widely adopted in the high-speed and high-performance devices and circuits. Based on the valence band E-k relations of strained Si/(111)Si1-xGex, the valence band and hole effective mass along the [111] and [-110] directions were obtained in this work. In comparison with the relaxed Si, the valence band edge degeneracy was partially lifted, and the significant change was observed band structures along the [111] and [-110] directions, as well as in its corresponding hole effective masses with the increasing Ge fraction. The results obtained can provide valuable references to the investigation concerning the Si-based strained devices enhancement and the conduction channel design related to stress and orientation. 关键词：KP method VALENCE BAND HOLE effective MASS

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Valence band structure of strained Si/(111)Si_(1-x)Ge_x

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