Enhancement of H_2 Sensing Properties of In_2O_3-based Gas Sensor by Chemical Modification with SiO_2

查看全文 作　　者：Zi Li ZHAN;Deng Gao JIANG;Jia Qiang XU;School of Chemical Engineering, Zhengzhou University, Zhengzhou 450002 Department of Chemical Engineering, Zhengzhou Institute of Light Industry,Zhengzhou 450002

出　　处：《Chinese Chemical Letters》索引2004年第15卷第12期,共4页

摘　　要：The sensitivity and selectivity to H2 of a new In203-based gas sensor were improved significantly by surface chemical modification. A dense layer of SiO2 near the surface of the porous In2O3 bead was formed by chemical vapor deposition (CVD) of diethoxydimethysilane (DEMS). The dense layer functioned as a molecular sieve, thereby the diffusion of gases with large molecular diameters, except for 1-12, was effectively controlled, resulting in a prominent selectivity and high sensitivity for H2. The working mechanism of the sensor was also presented. 关键词：氢气传感器三氧化二铟分子筛表面修饰二氧化硅化学气相沉积二乙氧基二甲硅烷

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Enhancement of H_2 Sensing Properties of In_2O_3-based Gas Sensor by Chemical Modification with SiO_2

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