应用TWINSCAN平台的ArF浸没式工艺(英文)

查看全文 作　　者：Jan [1]Mulkens;Bob [1]Streefkerk;Martin [1]Hoogendorp

机构地区：[1]ASML Netherlands B.V.

出　　处：《集成电路应用》索引2005年第22卷第1期,共7页

摘　　要：For 193-nm lithography, water proves to be a suitable immersion fluid. ArF immersion offers the potential to extend conventional optical lithography to the 45-nm node and potentially to the 32-nm node. Additionally, with existing lenses, the immersion option offers the potential to increase the focus window with 50% and more, depending on actual NA and feature type. In this paper we discuss the results on imaging and overlay obtained with immersion. Using a 0.75 NA ArF projection lens,we have built a proto-type immersion scanner using TWINSCANTM technology. First experimental data on imaging demonstrated a large gain of depth of focus (DoF),while maintaining image contrast at high scan speed. For first pilot production with immersion, a 0.85 NA ArF lens will be used. The resolution capabilities of this system will support 65 nm node semiconductor devices with a DOF significantly larger than 0.5 um. Early imaging data of such a system confirms a significant increase in focus window. 关键词：TWINSCAN ArF浸没集成电路 193纳米工艺

相关文献

参考文献（2）
引证文献（1）
耦合文献（0）

参考文献(2)

引证文献(1)

互联网出版许可证新出网证(渝)字10号全国400电话 - 免长途话费

应用TWINSCAN平台的ArF浸没式工艺(英文)

参考文献(2)

引证文献(1)

用户提示