Novel approach to harmonic control for Class F power amplifier with high power added efficiency

查看全文 作　　者：Jin [1]Boshi;Wu [1]Qun;Yang [1]Guohui;Kim [2]Bumman

机构地区：[1]School of Electronics and Information Technology, Harbin Institute of Technology, Harbin 150001, China;[2]Department of Electronics and Electrical Engineering, Pohang University of Science and Technology, Pohang, South Korea, 790784

出　　处：《仪器仪表学报》索引2007年第28卷第7期,共4页

摘　　要：This paper presents a new topology to implement Class F power amplifier for eliminating the on-resistance (R_(ON))effect.The time-domain and frequency-domain voltage and current waveforms for Class F amplifier are ana- lyzed using Fourier series analysis method.Considering the on-resistance effect,the formulas of the efficiency,output power,dc power dissipation,and fundamental load impedance are given from ideal current and voltage waveforms.For experimental verification,we designed and implemented a Class F power amplifier,which operates at 850 MHz using MGaAs/GaAs Heterostructure FET(HFET)device,and analyzed the measurement results.Test results show that the maximum PAE of 67% can be achieved at 28 dBm output power level. 关键词：F类功率放大器功效谐波控制电阻傅里叶级数

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Novel approach to harmonic control for Class F power amplifier with high power added efficiency

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