Light emitting devices based on Si nanoclusters:the integration with a photonic crystal and electroluminescence properties

查看全文 作　　者：Alessia [1]Irrera;Fabio [2]Iacona;Giorgia [1]Franzò;Andrea [1]Canino;Delfo [3]Sanfilippo;Gianfranco Di [3]Stefano;Angelo [3]Piana;Pier Giorgio [3]Fallica;Francesco [1]Priolo 机构地区：[1]MATIS CNR-INFM and Dipartimento di Fisica e Astronomia, Università di Catania, via Santa Sofia 64, 95123 Catania,Italy;[2]CNR-IMM, Sezione di Catania, stradale Primosole 50, 95121 Catania, Italy.;[3]STMicroelectronics,MLD R&D,stradale Primosole 50,95121 Catania, Italy. 出　　处：《Optoelectronics Letters》索引2007年第3卷第5期,共5页 基　　金：This work has been partially supported by MIUR through the proj- ects FIRB and D.D.1105. 摘　　要：We present the properties and potentialities of light emitting devices based on amorphous Si nanoclusters. Amorphousnanostructures may constitute an interesting alternative to Si nanocrystals for the monolithic integration of optical andelectrical functions in Si technology. In fact, they exhibit an intense room temperature electroluminescence (EL). The ELproperties of these devices have been studied as a function of current and of temperature. Moreover, to improve theextraction efficiency of the light, we have integrated the emitting system with a 2D photonic crystal structure opportunelyfabricated by using conventional optical lithography to reduce the total internal reflection of the emitted light. The extractionefficiency in such devices increases by a factor of 4 at a resonance wavelength. 关 键 词：发光装置 纳米聚类 光子晶体 集成电路