Numerical analysis and simulation of Czochralski growth processes for large diameter silicon crystals

查看全文 作　　者：TU Hailing XIAO Qinghua GAO Yu ZHOU Qigang ZHANG Guohu CHANG [1]Qing

机构地区：[1]National Engineering Research Center for Semiconductor Materials, General Research Institute for Nonferrous Metals, Beijing 100088, China

出　　处：《Rare Metals》索引2007年第26卷第6期,共7页

基　　金：the International Scientific and Technical Corporation Major Planning Project (No. 2005DFA5105). 摘　　要：Numerical analysis and simulation have been an effective means to develop the advanced growth technology and to control the defects type, size and density for silicon crystals of 300 mm and beyond. In the present paper, numerical analysis of the melt flow in the Czochralski (CZ) crystal growth configuration, the three dimensional (3D) modeling, the simulation of melt flow under the magnetic field, the inverse modeling and the time-dependent simulation are reviewed. Fi nally, comparison of numerical analysis with experimental measurements is discussed. 关键词：硅数学计算晶体形成数学模拟

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Numerical analysis and simulation of Czochralski growth processes for large diameter silicon crystals

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