Growth and dielectric properties of Ta2O5 single crystals grown by laser heated pedestal growth technique

查看全文 作　　者：[1]蒋毅坚;Ruyan [2]Guo;A. S. [2]Bhalla

机构地区：[1]Institute of Laser Engineering, Beijing University of Technology, Beijing 100124;[2]Materials Research Laboratory, The Pennsylvania State University, University Park, PA 16802, USA

出　　处：《中国激光》索引2008年第35卷第11期,共3页

基　　金：supported by the National Nature Science Foundation of China(No.10674041);the Funding Project for Academic Human Resources Development in Institutions of Higer Learning under the Jursdiction of Beijing Municipality 摘　　要：Ta2O5 single crystals have been grown by the laser heated pedestal growth (LHPG) technique up to several centimeters length with diameter of 1.1 mm. The crystal, characterized by X-ray diffraction, dielectric measurement, and thermal expansion analysis, has Htri-Ta2O5 symmetry. Dielectric permittivity, loss tangent along [001] and [110] direction were investigated over the temperature range from -80 ℃ to 100 ℃. Large dielectric anisotropy in Ta2O5 single crystal was observed. At room temperature, the dielectric permittivities (1 MHz) along [001] and [110] are 33.2 and 231.9, respectively. The reason of dielectric enhancement in Ta2O5 crystal grown by LHPG was also discussed. 关键词：电介质单晶激光器生长技术

相关文献

参考文献（10）
引证文献（3）
耦合文献（0）

参考文献(10)

引证文献(3)

互联网出版许可证新出网证(渝)字10号全国400电话 - 免长途话费

Growth and dielectric properties of Ta2O5 single crystals grown by laser heated pedestal growth technique

参考文献(10)

引证文献(3)

用户提示