Structural and photoluminescent properties of ZnO films deposited by radio frequency reactive sputtering

查看全文 作　　者：PENG [1,2]XingPing;WANG [1]ZhiGuang;SONG [1]Yin;JI [2]Tao;ZANG [1]Hang;YANG [2]YingHu;JIN [1]YunFan

机构地区：[1]Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000,China;[2]School of Physics Science and Technology,Lanzhou University,Lanzhou 730000,China

出　　处：《Science China(Physics,Mechanics & Astronomy)》索引2007年第50卷第3期,共6页

基　　金：Supported by the National Science Fund for Distinguished Young Scholars (Grant No. 10125522);the National Natural Science Foundation of China (Grant No. 10475102);the 'Xi-Bu-Zhi-Guang' Program of the Chinese Academy of Sciences 摘　　要：Zinc oxide films with c-axis preferred orientation were deposited on silicon (100) substrates by radio frequency (RF) reactive sputtering. The properties of the sam- ples were characterized by X-ray diffractometer, X-ray photoelectron spectroscopy and fluorescent-spectrophotometer. The effect of sputtering power and substrate temperature on the structural and photoluminescent (PL) properties of the ZnO films was investigated. The results indicated that when the sputtering power is 100 W and the substrate temperature is 300-400℃, it is suitable for the growth of high c-axis orientation and small strain ZnO films. A violet peak at about 380 nm and a blue band at about 430 nm were observed in the room temperature photolumines- cence spectra, and the origin of blue emission was investigated. 关键词：ZnO films XRD SPECTRA PL SPECTRA substrate temperature RF REACTIVE SPUTTERING

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Structural and photoluminescent properties of ZnO films deposited by radio frequency reactive sputtering

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