Research on frequency-temperature compensated sapphire-SrTiO_3 loaded cavity for hydrogen maser

查看全文 作　　者：Wang [1,2]Nuanrang;Zhou [2]Tiezhong;Gao [1,2]Lianshan;Yang [1,2]Chuntao;Feng [1,2]Keming

机构地区：[1]National Key Lab. of Metrology and Calibration Technology, Beijing 100854, P. R. China;[2]Beijing Inst. of Radio Metrology & Measurement, Beijing 100854, P. R. China

出　　处：《Journal of Systems Engineering and Electronics》索引2009年第20卷第4期,共7页

摘　　要：To obtain frequency-temperature compensation in a sapphire loaded cavity for hydrogen maser,a dielectric named SrTiO_3 is employed whose temperature coefficient of permittivity is opposite to that of sapphire. Based on theoretical analysis and computer simulation,a TE_(011) mode of a sapphire loaded cavity associated with two small rings of SrTiO_3 with different thickness is solved,and the useful parameters that influence the temperature coefficient of cavity are calculated.Finally an experiment is brought forward and its results are very close to the computing results.When the thickness of SiTiO_3 dielectric is 7 mm and the diameter is 17 mm in configuration b, the temperature coefficient of cavity is decreased from -58.8 kHz/K to -8.2 kHz/K and the quality factor is 40248. 关键词：电介质绝缘体温度 SiTiO3 电子技术

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Research on frequency-temperature compensated sapphire-SrTiO_3 loaded cavity for hydrogen maser

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