Built-in electric field influence on impurity-free vacancy disordering of InGaAs/InP quantum well structure

查看全文 作　　者：AN [1]YuPeng;MEI [2]Ting;TENG [3]JingHua;XU [2]ChengDong;WANG [1]YiDing 机构地区：[1]State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China;[2]School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore;[3]Institute of Materials Research and Engineering, 3 Research Link, Singapore 117602, Singapore 出　　处：《Chinese Science Bulletin》索引2010年第55卷第14期,共4页 基　　金：supported by the National High-Tech Research and Development Program of China (Grant No. 2007AA313080) 摘　　要：Built-in electric field may enhance or retard the impurity-free vacancy disordering (IFVD) during rapid thermal annealing (RTP) by imposing a drift on charged point defects. Built-in electric field is at the interface between dielectric layer and top layer of the structure. Subsequent rapid thermal annealing leads to different intermixing results due to different field directions on InP cap layers in different doping types. Experimental results also show different influences of the built-in field on the two sublattices largely due to different charge numbers of point defects. 关 键 词：内建电场 井身结构 INGAAS 内置 杂质 无序 InP 快速热退火