Blue LED growth from 2 inch to 8 inch

查看全文 作　　者：Frank [1]LU;Dong [1]LEE;Dan [1]BYRNES

机构地区：[1]Eric ARMOUR & William QUINN Veeco Turbodisc-Somerset

出　　处：《Science China(Technological Sciences)》索引2011年第54卷第1期,共5页

摘　　要：Growth of blue InGaN based LED structures on sapphire wafers from 2 inch to 8 inch in diameter was investigated using the Veeco K465 MOCVD platform. Our results indicate that the same pressure,rotation rate and hydride flows can be used for all wafer sizes. AFM and X-ray studies reveal that all wafer sizes have comparable high-quality crystallinity and defect levels for GaN and InGaN/GaN MQW growth. Although the larger diameter wafers exhibit larger wafer bow due to lattice and thermal mismatch,with proper wafer pocket design,good wavelength and thickness uniformity can be obtained for all wafer sizes. 关键词：蓝色LED 金属有机化学气相沉积晶圆尺寸原子力显微镜氮化铟镓生长缺陷晶格失配氮化镓

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Blue LED growth from 2 inch to 8 inch

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