Electrical and Raman properties of p-type and n-type modified graphene by inorganic quantum dot and organic molecule modification

查看全文 作　　者：HOU [1,2]YanXue;GENG [3]XiuMei;LI [2,4]YuanZuo;DONG [2,4]Bin;LIU [3]LiWei;SUN [2]MengTao

机构地区：[1]College of Science, Yanshan University, Qinhuangdao 066004, China;[2]Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China;[3]Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215125, China;[4]School of Science, Dalian Nationalities University, Dalian 116600, China

出　　处：《Science China(Physics,Mechanics & Astronomy)》索引2011年第54卷第3期,共4页

基　　金：supported by the National Natural Science Foundation of China (Grant Nos. 90923003, 10874234, 20703064 and 10804015);the Natural Science Foundation of Liaoning Province (Grant No. 20102039) 摘　　要：We obtained n-type and p-type modified graphene by mixing quantum dots and depositing electron-acceptor molecules on the surface of graphene, respectively. The electrical and optical properties of these two types of samples were measured. For n-type modified graphene, the electrons were transferred from quantum dots to graphene. The resistance of these quantum dots in modified n-type graphene is significantly smaller than that of pristine graphene. For p-type graphene, modified by electron-acceptor organic molecules of tetracyanoethylene (TCNE), electrons were transferred from graphene to TCNE molecules. The resistance of this molecular modified p-type graphene is about 10% larger than that of pristine graphene. The charge transfer effect on the optical properties of graphene was investigated with Raman spectra. 关键词：改性石墨有机分子光学性能拉曼光谱量子点 n型 p型修改

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Electrical and Raman properties of p-type and n-type modified graphene by inorganic quantum dot and organic molecule modification

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