Approaches for improving the performance of filament-type resistive switching memory

查看全文 作　　者：LIAN [1,2]WenTai;LONG [1]ShiBing;LU [1]HangBing;LIU [1,2]Qi;LI [1]YingTao;ZHANG [1]Sen;WANG [1]Yan;HUO [1]ZongLiang;DAI [2]YueHua;CHEN [2]JunNing;LIU [1]Ming

机构地区：[1]Laboratory of Nano-Fabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China;[2]College of Electronics and Technology, Anhui University, Hefei 230039, China

出　　处：《Chinese Science Bulletin》索引2011年第56卷第4期,共4页

基　　金：supported by the National Basic Research Program of China (2010CB934200 and 2008CB925002);the National Natural Science Foundation of China (60825403 and 50972160);the National High-Tech Research & Development Program of China (2008AA031403 and 2009AA03Z306) 摘　　要：Resistive random access memory (RRAM) has received significant research interest because of its promising potential in terms of down-scaling,high density,high speed and low power. However,its endurance,retention and uniformity are still imperfect. In this article,the physical mechanisms of filament-type RRAM and the approaches for improving the switching performance,including doping,process optimization and interface engineering,are introduced. 关键词：开关性能记忆体电阻式灯丝随机存取物理机制界面工程工艺优化

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Approaches for improving the performance of filament-type resistive switching memory

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