A low-voltage low-power CMOS voltage reference based on subthreshold MOSFETs

查看全文 作　　者：[1]王洪来;[1]张小兴;[1]戴宇杰;[1]吕英杰;Toshimasa [2]Matsuoka;Wang [2]Jun;Kenji [2]Taniguchi

机构地区：[1]Institute ofMicroelectronics, Nankai University, Tianjin 300457, China;[2]Department of Electrical, Electronic and Information Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka, 565-0871, Japan

出　　处：《Journal of Semiconductors》索引2011年第32卷第8期,共4页

摘　　要：This paper describes a CMOS voltage reference using only resistors and transistors working in weak inversion,without the need for any bipolar transistors.The voltage reference is designed and fabricated by a 0.18μm CMOS process.The experimental results show that the proposed voltage reference has a temperature coefficient of 370 ppm/℃at a 0.8 V supply voltage over the temperature range of-35 to 85℃and a 0.1%variation in supply voltage from 0.8 to 3 V.Furthermore,the supply current is only 1.5μA at 0.8 V supply voltage. 关键词：CMOS工艺电压基准 MOSFET 低功耗低电压亚阈值双极晶体管电源电压

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A low-voltage low-power CMOS voltage reference based on subthreshold MOSFETs

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