An overview of resistive random access memory devices

查看全文 作　　者：LI [1,2]YingTao;LONG [2]ShiBing;LIU [2]Qi;LU [2]HangBing;LIU [1]Su;LIU [2]Ming

机构地区：[1]School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China;[2]Laboratory of Nano-Fabrication and Novel Device Integration, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

出　　处：《Chinese Science Bulletin》索引2011年第56卷第28期,共7页

摘　　要：With recent progress in material science, resistive random access memory (RRAM) devices have attracted interest for nonvolatile, low-power, nondestructive readout, and high-density memories. Relevant performance parameters of RRAM devices include operating voltage, operation speed, resistance ratio, endurance, retention time, device yield, and multilevel storage. Numerous resistive-switching mechanisms, such as conductive filament, space-charge-limited conduction, trap charging and discharging, Schottky Emission, and Pool-Frenkel emission, have been proposed to explain the resistive switching of RRAM devices. In addition to a discussion of these mechanisms, the effects of electrode materials, doped oxide materials, and different configuration devices on the resistive-switching characteristics in nonvolatile memory applications, are reviewed. Finally, suggestions for future research, as well as the challenges awaiting RRAM devices, are given. 关键词：随机存取存储器电阻式记忆体装置非破坏性读出非易失性肖特基发射氧化物材料

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An overview of resistive random access memory devices

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