Experiment study on micro-structure on different crystallographic planes of mc-Si etched in alkaline solution

查看全文 作　　者：WANG [1]KunXia;FENG [1]ShiMeng;XU [1]HuaTian;TIAN [1]JiaTong;YANG [2]ShuQuan;HUANG [3]JianHua;PEI [4]Jun

机构地区：[1]Department of Physics,Shanghai Jiao Tong University,Shanghai 200240,China;[2]Shanghai Academy of Spaceflight Technology,Shanghai 200235,China;[3]Solarfun Power Holdings Solarfun Solar Shanghai Jiao Tong University R&D Center,Shanghai 201109,China;[4]Shanghai Shenzhou New Energy Source Development Co.Ltd,Shanghai 20112,China

出　　处：《Science China(Technological Sciences)》索引2012年第55卷第6期,共6页

基　　金：supported by the Shanghai Aerospace Foundation (Grant No. GC072003) 摘　　要：The investigation of multi-crystalline silicon(mc-Si) surface etching technology is a key point in solar cell research.In this paper,mc-Si surface was etched in the common alkaline solution modified by an additive for 20 minutes at 78-80°C.Samples' surface morphology was observed by scanning electron microscope(SEM).It is firstly found that the etched mc-Si surface has the uniform distribution of trap pits although the morphologies of trap pits are slightly different on different crystallographic planes.Si(100) plane was covered with many small Si-mountain ranges or long V-shape channels arranged in a crisscross pattern.For(110) plane and(111) plane,they were full of a lot of triangle pit-traps(or quadrilateral holes) and twisted earthworm trap pits,respectively.The measured reflectance of the sample was 20.5% at wavelength range of 400-900 nm.These results illustrate that alkaline solution modified by an additive can effectively etch out trap pits with a good trapping light effect on mc-Si surfaces.This method should be very valuable for mc-Si solar cells. 关键词：蚀刻技术碱性溶液晶面微结构扫描电子显微镜太阳能电池 Si表面实验

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Experiment study on micro-structure on different crystallographic planes of mc-Si etched in alkaline solution

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