A model for nanogrinding based on direct evidence of ground chips of silicon wafers

查看全文 作　　者：ZHANG [1]ZhenYu;HUO [1]YanXia;GUO [1]DongMing

机构地区：[1]Key Laboratory for Precision and Non-Traditional Machining Technology of Ministry of Education, Dalian University of Technology

出　　处：《Science China(Technological Sciences)》索引2013年第56卷第9期,共10页

基　　金：supported by the National Natural Science Foundation of China (Grant No. 91123013);Tribology Science Fund of State Key Laboratory of Tribology (Grant No. SKLTKF12A08) (Tsinghua University);Fund of State Key Laboratory of Metastable Materials Science and Technology (Grant No. 201302) (Yanshan University);the Fundamental Research Funds for the Central Universities (Grant No. DUT13YQ109) 摘　　要：Nanometer chips were directly fabricated using face nanogrinding carried out by ultrafine diamond grits at room temperature. Direct evidence for ground nanometer chips is cuboid, and the average ratio of width to thickness is 1.49. Chips of 9.0 nm in thickness, 13.3 nm in width, and 16.0 in diagonal were achieved and confirmed using transmission electron microscopy. Based on the nanometer chips observed, a model was proposed according to the mass conservation and fundamental mechanism of face grinding. The surface roughness and thickness of damaged layers measured experimentally are in good agreement with the prediction of the developed model. The feed rate significantly affects the surface roughness and thickness of damaged layers, when keeping the wheel and table speeds constant, respectively. 关键词：纳米芯片模型证据地面透射电子显微镜表面粗糙度硅片超细金刚石

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A model for nanogrinding based on direct evidence of ground chips of silicon wafers

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