Analyses of temperature-dependent interface states,series resistances,and AC electrical conductivities of Al/p Si and Al/Bi_4Ti_3O_(12)/p Si structures by using the admittance spectroscopy method

查看全文 作　　者：Mert [1]Ylldlrlm;Perihan [2]Durmus;Semsettin [2]Altlndal 机构地区：[1]Department of Physics,Faculty of Arts & Sciences,Düzce University;[2]Department of Physics,Faculty of Sciences,Gazi University 出　　处：《Chinese Physics B》索引2013年第22卷第10期,共6页 摘　　要：In this study,Al/p–Si and Al/Bi4Ti3O12/p–Si structures are fabricated and their interface states(N ss),the values of series resistance(R s),and AC electrical conductivity(σac) are obtained each as a function of temperature using admittance spectroscopy method which includes capacitance–voltage(C–V) and conductance–voltage(G–V) measurements.In addition,the effect of interfacial Bi4Ti3O12(BTO) layer on the performance of the structure is investigated.The voltagedependent profiles of N ss and R s are obtained from the high–low frequency capacitance method and the Nicollian method,respectively.Experimental results show that N ss and R s,as strong functions of temperature and applied bias voltage,each exhibit a peak,whose position shifts towards the reverse bias region,in the depletion region.Such a peak behavior is attributed to the particular distribution of N ss and the reordering and restructuring of N ss under the effect of temperature.The values of activation energy(E a),obtained from the slope of the Arrhenius plot,of both structures are obtained to be bias voltage-independent,and the E a of the metal–ferroelectric–semiconductor(MFS) structure is found to be half that of the metal–semiconductor(MS) structure.Furthermore,other main electrical parameters,such as carrier concentration of acceptor atoms(N A),built-in potential(V bi),Fermi energy(E F),image force barrier lowering(?Φb),and barrier height(Φb),are extracted using reverse bias C-2–V characteristics as a function of temperature. 关 键 词：交流电导率 温度相关 界面状态 串联电阻 P-SI 结构体 谱方法 AL