Recent development of studies on the mechanism of resistive memories in several metal oxides

查看全文 作　　者：TIAN [1]XueZeng;WANG [1]LiFen;LI [1]XiaoMin;WEI [1]JiaKe;YANG [1]ShiZe;XU [1]Zhi;WANG [1]WenLong;BAI [1]XueDong

机构地区：[1]Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences

出　　处：《Science China(Physics,Mechanics & Astronomy)》索引2013年第56卷第12期,共9页

摘　　要：Resistive switching random access memories(RRAM)have been considered to be promising for future information technology with applications for non-volatile memory,logic circuits and neuromorphic computing.Key performances of those resistive devices are approaching the realistic levels for production.In this paper,we review the progress of valence change type memories,including relevant work reported by our group.Both electrode engineering and in-situ transmission electron microscopy(TEM)high-resolution observation have been implemented to reveal the influence of migration of oxygen anions/vacancies on the resistive switching effect.The understanding of resistive memory mechanism is significantly important for device applications. 关键词：记忆机制电阻式金属氧化物非易失性存储器随机存取存储器透射电子显微镜机理器件应用

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Recent development of studies on the mechanism of resistive memories in several metal oxides

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