Characterisation of Photocathodes Based on Pb Thin Film Deposited by UV Pulsed Laser Ablation

查看全文 作　　者：Francisco [1]Gontad;Antonella [2]Lorusso;Giancarlo [3]Gatti;Massimo [3]Ferrario;Laura Gioia [4,5]Passione;Luana [6]Persano;Nicola [5]Lovergine;Alessio [2]Perrone 机构地区：[1]Istituto Nazionale di Fisica Nucleare e Università del Salento;[2]Università del Salento,Dipartimento di Matematica e Fisica 'E.De Giorgi';[3]Laboratori Nazionali di Frascati,Istituto Nazionale di Fisica Nucleare;[4]Center for Biomolecular Nanotechnologies,Istituto Italiano di Tecnologia;[5]Dipartimento di Ingegneria dell'Innovazione,Università del Salento;[6]National Nanotechnology Laboratory(NNL) 出　　处：《Journal of Materials Science & Technology》索引2014年第30卷第1期,共4页 基　　金：supported by the Italian National Institute of Nuclear Physics(INFN) 摘　　要：This work deals with the deposition of lead(Pb) thin films by the U V pulsed laser ablation technique,for their further use as photocathode devices in superconducting radio frequency guns.Scanning electron microscopy and atomic force microscopy analyses were performed to study the morphological features of Pb thin films deposited on Si(100) and Nb substrates.The films showed a granular structure with a nearly fully covered surface only for that one deposited on Nb substrata X-ray diffraction measurements indicate the growth of polycrystalline Pb thin films with a preferential orientation along(111) planes.Results of the photoemission performance of Pb thin film deposited on Nb substrate showed a very encouraging average value of quantum efficiency of 6×10^(-5) through a single-photon absorption process,promoting further studies in the realisation of Pb photocathodes by this 关 键 词：脉冲激光烧蚀 薄膜沉积 阴极沉积 光电器件 紫外 原子力显微镜分析 SI(100) 扫描电子显微镜