Selective and localized laser annealing effect for high- performance flexible multilayer MoS2 thin-film transistors

查看全文 作　　者：Hyukjun [1]Kwon;Woong [2]Choi;Daeho [1,3]Lee;Yunsung [4]Lee;Junyeon [4]Kwon;Byungwook [5]Yoo;Costas P. [1]Grigoropoulos;Sunkook [4]Kim

机构地区：[1]Department of Mechanical Engineering, University of California, Berkeley, CA 94720-1740, USA;[2]School of Advanced Materials Engineering, Kookmin University, Seoul 136-702, South Korea;[3]Department of Mechanical Engineering, 6achon University, Seongnam-si, Gyeonggi 461-701, South Korea;[4]Department of Electronics and Radio Engineering, Kyung Hee University, Gyeonggi 446-70 I, South Korea;[5]Flexible Display Research Center, Korea Electronics Technology Institute, Seongnam, Gyeonggi 463-816, South Korea

出　　处：《Nano Research》索引2014年第7卷第8期,共9页

关键词：激光退火薄膜晶体管 MOS2 柔性性能退火效应透射电子显微镜分析场效应晶体管

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Selective and localized laser annealing effect for high- performance flexible multilayer MoS2 thin-film transistors

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