Experimental demonstration of the three-phase-shifted DFB semiconductor laser with buried heterostructure using common holographic exposure

查看全文 作　　者：LU [1]LinLin;CAO [1]BaoLi;ZHANG [1]LiBo;TANG [1]Song;LI [1]LianYan;LI [1]SiMin;SHI [1]YueChun;CHEN [1]XiangFei

机构地区：[1]National Laboratory of Microstructures & School of Engineering and Applied Sciences, Nanjing University

出　　处：《Science China(Technological Sciences)》索引2014年第57卷第11期,共5页

基　　金：supported by the National Natural Science Foundation of China(Grant No.61090392);the National Hi-Tech Research and Development Program of China('863'Project)(Grant No.2011AA010300);the Key Programs of the Ministry of Education of China(Grant No.20100091110005) 摘　　要：In this article,we report the first experimental demonstration of the three-phase-shifted(3PS)DFB semiconductor laser with buried heterostructure based on the Reconstruction-Equivalent-Chirp(REC)technique.The simulation results show that the performances of the equivalent 3PS DFB semiconductor laser are nearly the same as those of the true 3PS laser.Compared with the quarter-wave-phase shift(QWS)DFB semiconductor laser,the 3PS DFB semiconductor laser shows better single-longitude-mode(SLM)property even at high injection current with high temperature.However,it only changes theμm-level sampling structures but the seed grating is uniform using the REC technique.Therefore,its fabrication cost is low. 关键词：半导体激光器掩埋异质结构 DFB 相移示范实验曝光全息

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Experimental demonstration of the three-phase-shifted DFB semiconductor laser with buried heterostructure using common holographic exposure

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