Single event upset rate modeling for ultra-deep submicron complementary metal-oxide-semiconductor devices

查看全文 作　　者：Liang [1]HE;Hua [1]CHEN;Peng [1]SUN;Xiaofei [2]JIA;Chongguang [1]DAI;Jing [1]LIU;Long [1]SHAO;Zhaoqing [1]LIU

机构地区：[1]School of Advanced Materials and Nanotechnology, Xidian University;[2]School of Electronic and Information Engineering, Ankang University

出　　处：《Science China(Information Sciences)》索引2016年第59卷第4期,共11页

基　　金：supported by National Natural Science Foundation of China (Grant No. 61106062);Fundamental Research Funds for the Central Universities (Grant No. K50511050007) 摘　　要：Based on the integral method of single event upset(SEU) rate and an improved charge collection model for ultra-deep submicron complementary metal-oxide-semiconductor(CMOS) devices, three methods of SEU rate calculation are verified and compared. The results show that the integral method and the figure of merit(FOM) methods are basically consistent at the ultra-deep submicron level. By proving the validity of the carrier collection model considering charge sharing, the applicability of two FOM methods is verified, and the trends of single-bit and multiple-bit upset rates for ultra-deep submicron CMOS are analyzed. 关键词：互补金属氧化物半导体单粒子翻转率超深亚微米模型改进半导体器件深亚微米CMOS 载流子收集收集装置

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Single event upset rate modeling for ultra-deep submicron complementary metal-oxide-semiconductor devices

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