Molecular Dynamics Simulation on Hydrogen Ion Implantation Process in Smart-Cut Technology

查看全文 作　　者：Bing [1]Wang;Bin [1]Gu;Hongbin [2]Zhang;Xiqiao [3]Feng

机构地区：[1]School of Manufacturing Science and Engineering,Southwest University of Science and Technology;[2]School of Civil Engineering and Architecture,Hainan University;[3]Institute of Biomechanics and Medical Engineering,Department of Engineering Mechanics,Tsinghua University

出　　处：《Acta Mechanica Solida Sinica》索引2016年第29卷第2期,共9页

基　　金：Project supported by the National Natural Science Foundation of China(No.11372261);the Excellent Young Scientists Supporting Project of Science and Technology Department of Sichuan Province(No.2013JQ0030);the Supporting Project of Department of Education of Sichuan Province(No.2014zd3132);the Opening Project of Key Laboratory of Testing Technology for Manufacturing Process,Southwest University of Science and Technology-Ministry of Education(No.12zxzk02);the Fund of Doctoral Research of Southwest University of Science and Technology(No.12zx7106);the Postgraduate Innovation Fund Project of Southwest University of Science and Technology(No.14ycxjj0121) 摘　　要：The hydrogen ion implantation process in Smart-Cut technology is investigated in the present paper using molecular dynamics(MD) simulations.This work focuses on the effects of the implantation energy,dose of hydrogen ions and implantation temperature on the distribution of hydrogen ions and defect rate induced by ion implantation.Numerical analysis shows that implanted hydrogen ions follow an approximate Gaussian distribution which mainly depends on the implantation energy and is independent of the hydrogen ion dose and implantation temperature.By introducing a new parameter of defect rate,the influence of the processing parameters on defect rate is also quantitatively examined. 关键词：分子动力学模拟离子注入工艺智能切割氢离子缺陷率切割技术离子分布数值分析

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Molecular Dynamics Simulation on Hydrogen Ion Implantation Process in Smart-Cut Technology

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