Investigation of etching method for fabricating deep through holes on ultra-high resistivity silicon

查看全文 作　　者：Lin [1]Du;Shengrui [1]Xu;Ying [1]Wang;Ling [1]Lü;Jincheng [1]Zhang;Yue [1]Hao

机构地区：[1]School of Microelectronics,Xidian University

出　　处：《Journal of Semiconductors》索引2017年第38卷第5期,共5页

基　　金：Project supported by the National Natural Science Foundation of China(Nos.61574108,61574112,61504099) 摘　　要：In this paper,the etching characteristics of the ultra-high resistivity silicon(UHRS) by using the Bosch process were investigated.The experimental results indicated that the sulfur hexafluoride flux,the temperature of the substrate,the platen power and the etching intermittence had important influence on the etching rate and the etching morphology of the UHRS.The profiles and morphologies of sidewall were characterized with scanning electron microscopy(SEM).By using an improved three-stage Bosch process,380-μm deep through holes were fabricated on the UHRS with the average etching rate of about 3.14 μm/min.Meanwhile,the fabrication mechanism of deep through holes on the UHRS by using the three-stage Bosch process was illustrated on the basis of the experimental results. 关键词：ultra-high resistivity silicon deep through hole three-stage etching method Bosch process

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Investigation of etching method for fabricating deep through holes on ultra-high resistivity silicon

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