Analysis of the growth of GaN epitaxy on silicon

查看全文 作　　者：Danmei [1]Zhao;Degang [2]Zhao

机构地区：[1]Department of Electronic Information and Physics, Changzhi University;[2]State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science

出　　处：《Journal of Semiconductors》索引2018年第39卷第3期,共3页

摘　　要：Due to the great potential of Ga N based devices, the analysis of the growth of crack-free Ga N with high quality has always been a research hotspot. In this paper, two methods for improving the property of the Ga N epitaxial layer on Si(111) substrate are researched. Sample A, as a reference, only has an Al N buffer between the Si substrate and the epitaxy. In the following two samples, a Ga N transition layer(sample B) and an Al Ga N buffer(sample C) are grown on the Al N buffer separately. Both methods improve the quality of Ga N. Meanwhile, using the second method, the residual tensile thermal stress decreases. To further study the impact of the two introduced layers, we investigate the stress condition of Ga N epitaxial layer by Raman spectrum. According to the Raman spectrum, the calculated residual stress in the Ga N epitaxial layer is approximately 0.72 GPa for sample B and0.42 GPa for sample C. The photoluminescence property of Ga N epitaxy is also investigated by room temperature PL spectrum. 关键词：取向附生生长光致发光性质拉曼光谱剩余压力缓冲区压力条件房间温度

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Analysis of the growth of GaN epitaxy on silicon

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