Hybrid dual-channel phototransistor based on ID t-Se and 2D ReS2 mixed-dimensional heterostructures

查看全文 作　　者：Jingkai [1,2,3]Qin;Hang [1,3]Yan;Gang [2]Qiu;Mengwei [2]Si;Peng [4]Miao;Yuqin [2]Duan;Wenzhu [3]Shao;Liang [1,3]Zhen;Chengyan [1,3]Xu;Peide D [2]Ye

机构地区：[1]State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China;[2]School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA;[3]School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China;[4]School cf Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, China

出　　处：《Nano Research》索引2019年第12卷第3期,共6页

基　　金：National Natural Science Foundation of China (Nos. 51572057 and 51772064);AFOSR/NSF EFRI 2DARE program, ARO and SRC. 摘　　要：The com bination of mixed-dimensional semiconducti ng materials can provide additional freedom to construct integrated n anoscale electronic and optoelectronic devices with diverse functionalities. In this work, we report a high-performanee dual-channel phototransistor based on one-dimensional (1D)/two-dimensional (2D) trigonal selenium (t-Se)/ReS2 heterostructures grown by chemical vapor deposition. The injection and separati on efficie ncy of photoge nerated electro n-hole pairs can be greatly improved due to the high-quality in terfacial con tact betwee n t-Se nano belts and ReS2 films. Compared with bare ReS2 film devices, the dual-cha nnel phototra nsistor based on t-Se/ReS2 heterostructure exhibits considerable enhancement with the responsivity (R) and detectivity (D^*) up to 98 A·W^-1 and 6 x 10^10 Jones at 400 nm illumination with an in tensity of 1.7 mW·cm^-2, respectively. Besides, the respo nse time can also be reduced by three times of magnitude to less than 50 ms due to the type-11 band alignment at the in terface. This study opens up a promising ave nue for high-performa nee photodetectors by constructing mixed-dimensional heterostructures. 关键词：van der WAALS HETEROSTRUCTURES ReS2 trigonal selenium (t-Se) NANOBELT PHOTOTRANSISTOR

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Hybrid dual-channel phototransistor based on ID t-Se and 2D ReS2 mixed-dimensional heterostructures

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