The Variables and Invariants in the Evolution of Logic Optical Lithography Process

查看全文 作　　者：Qiang [1]Wu

机构地区：[1]Shanghai IC R&D Center,Shanghai,China,201210

出　　处：《Journal of Microelectronic Manufacturing》索引2019年第2卷第1期,共12页

摘　　要：Photolithography has been a major enabler for the continuous shrink of the semiconductor manufacturing design rules.Throughout the years of the development of the photolithography,many new technologies have been invented and successfully implemented,such as image projection lithography,chemically amplified photoresist,phase shifting mask,optical proximity modeling and correction,etc.From 0.25μm technology to the current 7 nm technology,the linewidth has been shrunk from 250 nm to about 20 nm,or 12.5 times.Although imaging resolution is proportional to the illumination wavelength,with the new technologies,the wavelength has only been shrunk from 248 nm to 134.7 nm(193 nm immersion in water),less than 2 times.Would it mean that the imaging performance has been continuously declining?Or we have yet fully utilized the potential of the photolithography technology?In this paper,we will present a study on the key parameters and process window performance of the image projection photolithography from 0.25μm node to the current 7 nm node. 关键词：image projection PHOTOLITHOGRAPHY imaging contrast exposure latitude MASK error factor LINEWIDTH uniformity chemically amplified PHOTORESIST phase shifting MASK OPTICAL proximity correction and photoacid diffusion length

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The Variables and Invariants in the Evolution of Logic Optical Lithography Process

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