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Approaching the minimum lattice thermal conductivity of p-type SnTe thermoelectric materials by Sb and Mg alloying

查看全文 作  者:Tiezheng [1]Fu;Jiazhan [1]Xin;Tiejun [1]Zhu;Jiajun [1]Shen;Teng [1]Fang;Xinbing [1]Zhao 高影响力作者 机构地区:[1]State Key Laboratory of Silicon Materials,and School of Materials Science and Engineering,Zhejiang University高影响力机构 出  处:《Science Bulletin》索引2019年第64卷第14期,共7页高影响力期刊 基  金:supported by the National Key Research and Development Program of China (2018YFB0703600);the National Science Fund for Distinguished Young Scholars (51725102);the National Natural Science Foundation of China (51861145305, 51761135127, and 51871199) 摘  要:SnTe, as the nontoxic analogue to high-performance PbTe thermoelectric material, has captured the worldwide interest recently. Many triumphant instances focus on the strategies of band convergence, resonant doping, and nano-precipitates phonon scattering. Herein, the p-type SnTe-based materials Sn0.85-xSb0.15MgxTe (x=0-0.10) are fabricated and a combined effect of Sb and Mg is investigated. Sb alloying tunes the hole carrier concentration of SnTe and decreases the lattice thermal conductivity. Mg alloying leads to a nearly hundredfold rise of disorder parameter due to the large mass and strain fluctuations, and as a consequence the lattice thermal conductivity decreases further down to ~0.64Wm^-1K^-1 at 773K, close to the theoretical minimum of the lattice thermal conductivity (~0.50Wm^-1K^-1) of SnTe. In conjunction with the enhancement of the Seebeck coefficient caused by band convergence due to Mg alloying, the maximum zTmax reaches ~1.02 and the device zTdevice of ~0.50 at 773K for Sn0.79Sb0.15Mg0.06Te, suggesting this SnTe-based composition has a promising potential in intermediate temperature thermoelectric applications. 关 键 词:Tin TELLURIDE THERMOELECTRIC materials Point DEFECT scattering Band convergence
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