Some recent advances in ab initio calculations of nonradiative decay rates of point defects in semiconductors

查看全文 作　　者：Linwang [1]Wang

机构地区：[1]Materials Sciences Division, Lawrence Berkeley National Laboratory

出　　处：《Journal of Semiconductors》索引2019年第40卷第9期,共6页

基　　金：supported by the Director, Office of Science (SC), Basic Energy Science (BES)/Materials Science and Engineering Division (MSED) of the U.S. Department of Energy (DOE) under the Contract No. DE-AC02-05CH11231 through the Theory of Material project 摘　　要：In this short review,we discuss a few recent advances in calculating the nonradiative decay rates for point defects in semiconductors.We briefly review the debates and connections of using different formalisms to calculate the multi-phonon processes.We connect Dr.Huang's formula with Marcus theory formula in the high temperature limit,and point out that Huang's formula provide an analytical expression for the phonon induced electron coupling constant in the Marcus theory formula.We also discussed the validity of 1D formula in dealing with the electron transition processes,and practical ways to correct the anharmonic effects. 关键词：SCF SOME recent advances in ab INITIO calculations of nonradiative DECAY rates of point defects in SEMICONDUCTORS

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Some recent advances in ab initio calculations of nonradiative decay rates of point defects in semiconductors

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