A gate-free MoS2 phototransistor assisted by ferroelectrics

查看全文 作　　者：Shuaiqin [1,2]Wu;Guangjian [1]Wu;Xudong [1]Wang;Yan [1]Chen;Tie [1,2]Lin;Hong [1,2]Shen;Weida [1,2]Hu;Xiangjian [1,2]Meng;Jianlu [1,2]Wang;Junhao [1,2]Chu

机构地区：[1]State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China;[2]University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Journal of Semiconductors》索引2019年第40卷第9期,共6页

基　　金：supported by the Major State Basic Research Development Program (Grant Nos. 2016YFA0203900, 2016YFB0400801 and 2015CB921600);Key Research Project of Frontier Sciences of Chinese Academy of Sciences (Nos. QYZDB-SSW-JSC016, QYZDY-SSW-JSC042);Strategic Priority Research Program of Chinese Academy of Sciences (XDPB12, XDB 3000000);Natural Science Foundation of China (Grant Nos. 61521001, 61574151, 61574152, 61674158, 61722408, 61734003 and 61835012);Natural Science Foundation of Shanghai (Grant No. 16ZR1447600, 17JC1400302) 摘　　要：During the past decades,transition metal dichalcogenides(TMDs) have received special focus for their unique properties in photoelectric detection.As one important member of TMDs,MoS2 has been made into photodetector purely or combined with other materials,such as graphene,ionic liquid,and ferroelectric materials.Here,we report a gate-free MoS2 phototransistor combined with organic ferroelectric material poly(vinylidene fluoride-trifluoroethylene)(P(VDF-TrFE)).In this device,the remnant polarization field in P(VDF-TrFE) is obtained from the piezoelectric force microscope(PFM) probe with a positive or negative bias,which can turn the dipoles from disorder to be the same direction.Then,the MoS2 channel can be maintained at an accumulated state with downward polarization field modulation and a depleted state with upward polarization field modulation.Moreover,the P(VDF-TrFE) segregates MoS2 from oxygen and water molecules around surroundings,which enables a cleaner surface state.As a photodetector,an ultra-low dark current of 10^–11 A,on/off ration of more than 10^4 and a fast photoresponse time of 120 μs are achieved.This work provides a new method to make high-performance phototransistors assisted by the ferroelectric domain which can operate without a gate electrode and demonstrates great potential for ultra-low power consumption applications. 关键词：TMDS MOS2 PHOTOTRANSISTOR P(VDF-TrFE) PFM ultra-low power consumption

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A gate-free MoS2 phototransistor assisted by ferroelectrics

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