Epitaxial graphene gas sensors on SiC substrate with high sensitivity

查看全文 作　　者：Cui [1]Yu;Qingbin [1]Liu;Zezhao [1]He;Xuedong [1]Gao;Enxiu [2]Wu;Jianchao [1]Guo;Chuangjie [1]Zhou;Zhihong [1]Feng 机构地区：[1]National Key Laboratory of ASIC,Hebei Semiconductor Research Institute,Shijiazhuang 050051,China;[2]College of Precision Instrument and Opto-electronics Engineering,Tianjin University,Tianjin 300072,China 出　　处：《Journal of Semiconductors》索引2020年第41卷第3期,共5页 基　　金：supported by the National Natural Science Foundation of China (61674131 and 61306006) 摘　　要：2D material of graphene has inspired huge interest in fabricating of solid state gas sensors.In this work,epitaxial graphene,quasi-free-standing graphene,and CVD epitaxial graphene samples on SiC substrates are used to fabricate gas sensors.Defects are introduced into graphene using SF6 plasma treatment to improve the performance of the gas sensors.The epitaxial graphene shows high sensitivity to NO2 with response of 105.1%to 4 ppm NO2 and detection limit of 1 ppb.The higher sensitivity of epitaxial graphene compared to quasi-free-standing graphene,and CVD epitaxial graphene was found to be related to the different doping types of the samples. 关 键 词：GRAPHENE HIGH LIMIT