Unprecedented differences in the diamond nucleation density between carbon-and silicon-faces of 4H-silicon carbides

查看全文 作　　者：Bo [1]Wang;Pitsiri [2]Sukkaew;Guichen [1]Song;Andreas [3]Rosenkranz;Yunxiang [1]Lu;Kazhihito [4]Nishimura;Jia [5]Wang;Jilei [1]Lyu;Yang [1]Cao;Jian [1]Yi;Lars [2]Ojamae;He [1]Li;[1]Nanjiang 机构地区：[1]Key Laboratory of Marine New Materials and Related Technology,Zhejiang Key Laboratory of Marine Materials and Protection Technology,Ningbo Institute of Material Technology&Engineering,Chinese Academy of Sciences,Ningbo 315201,China;[2]Department of Physics,Chemistry,and Biology,Linkoping University,SE-58183 Linkoping,Sweden;[3]Department of Chemical Engineering,Biotechnology and Materials,Universidad de Chile,Avenida Beauchef 851,Santiago,Chile;[4]Mechanical Systems Engineering,Kogakuin University,Tokyo 192-0015,Japan;[5]Department of Mechanical and Materials Engineering,University of Nebraska-Lincoln,Lincoln,NE 68588,United State 出　　处：《Chinese Chemical Letters》索引2020年第31卷第7期,共6页 基　　金：the National Key Research and Development Project(No.2017YFE0128600);Ningbo 3315 Innovation Team(No.2019A-18-C);Science and Technology Innovation 2025 Major Project of Ningbo(No.2018023);National Defense Key Laboratory Fund(No.6142807180511);Innovation Funding of State Oceanic Administration(No.NBHY-2017-Z3);Ningbo Industrial Technology Innovation Project(No.2016B10038);‘13th Five-Year’Equipment Pre-research Sharing Project(No.E1710161);‘Key Talents’Senior Engineer Project of Ningbo Institute of Materials Technology and Engineering;the financial support of CONICYT in the project Fondecyt 11180121;the financial support given the VID in the framework of U-IniciaUI013/2018 and the academic direction of the University of Chile;financial support from the Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University(Faculty Grant SFO Mat LiU No.200900971);the Swedish Research Council(VR)。 摘　　要：4H-silicon carbides deposited by diamond films have wide applications in many fields such as semiconductor heterojunction,heat sink and mechanical sealing.Nucleation plays a critical role in the deposition of the diamond film on 4H-silicon carbides.Nevertheless,as a typical polar material,the fundamental mechanism of diamond nucleation on different faces of 4H-silicon carbides has not been fully understood yet.In this contribution,nucleation of diamond was performed on the carbon-and silicon-faces of 4H-silicon carbides in a direct current chemical vapor deposition device.The nucleation density on the carbon-face is higher by 2-3 orders of magnitude compared to the silicon-face.Transmission electron microscopy verifies that there are high density diamond nuclei on the interface between the carbon-face and the diamond film,which is different from columnar diamond growth structure on the silicon-face.Transition state theory calculation reveals that the unprecedented distinction of the nucleation density between the carbon-face and the silicon-face is attributed to different desorption rates of the absorbed hydrocarbon radicals.In addition,kinetic model simulations demonstrate that it is more difficult to form CH2(s)-CH2(s)dimers on silicon-faces than carbon-faces,resulting in much lower nucleation densities on silicon-faces. 关 键 词：4H-silicon carbide Diamond nucleation mechanism Transmission electron microscopy Transition state theory Kinetic model simulation