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A review of silicon-based wafer bonding processes,an approach to realize the monolithic integration of Si-CMOS and III-V-on-Si wafers

查看全文 作　　者：Shuyu [1]Bao;Yue [1]Wang;Khaw [1]Lina;Li [1]Zhang;Bing [1,2]Wang;Wardhana Aji [1]Sasangka;Kenneth Eng Kian [1]Lee;Soo Jin [1,3]Chua;Jurgen [1,4]Michel;Eugene [1,5]Fitzgerald;Chuan Seng [1,6]Tan;Kwang Hong [1]Lee 高影响力作者 机构地区：[1]Low Energy Electronic Systems(LEES),Singapore-MIT Alliance for Research and Technology(SMART),Singapore 138602,Singapore;[2]School of Electronics and Information Technology,Sun Yat-Sen University,Guangzhou 510006,China;[3]Department of Electrical and Computer Engineering,National University of Singapore,Singapore 117576,Singapore;[4]Materials Research Laboratories,Massachusetts Institute of Technology,Cambridge,MA,02139,USA;[5]Department of Materials Science and Engineering,Massachusetts Institute of Technology,Cambridge,MA 02139,USA;[6]School of Electrical and Electronic Engineering,Nanyang Technological University,Singapore 639798,Singapore高影响力机构 出　　处：《Journal of Semiconductors》索引2021年第42卷第2期,共20页高影响力期刊 摘　　要：The heterogeneous integration of III-V devices with Si-CMOS on a common Si platform has shown great promise in the new generations of electrical and optical systems for novel applications,such as HEMT or LED with integrated control circuitry.For heterogeneous integration,direct wafer bonding(DWB)techniques can overcome the materials and thermal mismatch issues by directly bonding dissimilar materials systems and device structures together.In addition,DWB can perform at wafer-level,which eases the requirements for integration alignment and increases the scalability for volume production.In this paper,a brief review of the different bonding technologies is discussed.After that,three main DWB techniques of single-,double-and multi-bonding are presented with the demonstrations of various heterogeneous integration applications.Meanwhile,the integration challenges,such as micro-defects,surface roughness and bonding yield are discussed in detail. 关 键 词：MATERIAL thin film integrated circuit
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