Substitutional doping in 2D transition metal dichalcogenides

查看全文 作　　者：Leyi [1,2]Loh;Zhepeng [1]Zhang;Michel [2]Bosman;Goki [1,3,4]Eda

机构地区：[1]Department of Physics,National University of Singapore,2 Science Drive 3,Singapore,117551,Singapore;[2]Department of Materials Science and Engineering,National University of Singapore,9 Engineering Drive 1,Singapore,117575,Singapore;[3]Department of Chemistry,National University of Singapore,3 Science Drive 3,Singapore,117543,Singapore;[4]Centre for Advanced 2D Materials,National University of Singapore,2 Science Drive 2,Singapore,117542,Singapore

出　　处：《Nano Research》索引2021年第14卷第6期,共14页

基　　金：the Ministry of Education(MOE),Singapore,under AcRF Tier 3(MOE2018-T3-1-005);the Singapore National Research Foundation for funding the research under medium-sized centre programme.M.B.acknowledges support from MOE’s AcRF Tier 1(R-284-000-179-133). 摘　　要：Two-dimensional(2D)van der Waals transition metal dichalcogenides(TMDs)are a new class of electronic materials offering tremendous opportunities for advanced technologies and fundamental studies.Similar to conventional semiconductors,substitutional doping is key to tailoring their electronic properties and enabling their device applications.Here,we review recent progress in doping methods and understanding of doping effects in group 6 TMDs(MX2,M=Mo,W;X=S,Se,Te),which are the most widely studied model 2D semiconductor system.Experimental and theoretical studies have shown that a number of different elements can substitute either M or X atoms in these materials and act as n-or p-type dopants.This review will survey the impact of substitutional doping on the electrical and optical properties of these materials,discuss open questions,and provide an outlook for further studies. 关键词：substitutional doping transition metal dichalcogenide two-dimensional semiconductor ACCEPTOR DONOR

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Substitutional doping in 2D transition metal dichalcogenides

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