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Running-in process of Si-SiO_(x)/SiO_(2)pair at nanoscale-Sharp drops in friction and wear rate during initial cycles

查看全文 作　　者：Lei [1]CHEN;Seong [2]HKIM;Xiaodong [1]WANG;Linmao [1]QIAN 高影响力作者 机构地区：[1]Tribology Research Institute,National Traction Power Laboratory,Southwest Jiaotong University,Chengdu 610031,China;[2]Department of Chemical Engineering,The Pennsylvania State University,University Park,Pennsylvania 16802,USA高影响力机构 出　　处：《Friction》索引2013年第1卷第1期,共11页高影响力期刊 基　　金：the financial support from National Basic Research Program(No.2011CB707604);Natural Science Foundation of China(51175441,90923017). 摘　　要：Using an atomic force microscope,the running-in process of a single crystalline silicon wafer coated with native oxide layer(Si-SiO_(x))against a SiO_(2)microsphere was investigated under various normal loads and displacement amplitudes in ambient air.As the number of sliding cycles increased,both the friction force Ft of the Si-SiO_(x)/SiO_(2)pair and the wear rate of the silicon surface showed sharp drops during the initial 50 cycles and then leveled off in the remaining cycles.The sharp drop in Ft appeared to be induced mainly by the reduction of adhesion-related interfacial force between the Si-SiO_(x)/SiO_(2)pair.During the running-in process,the contact area of the Si-SiO_(x)/SiO_(2)pair might become hydrophobic due to removal of the hydrophilic oxide layer on the silicon surface and the surface change of the SiO_(2)tip,which caused the reduction of friction force and the wear rate of the Si-SiO_(x)/SiO_(2)pair.A phenomenological model is proposed to explain the running-in process of the Si-SiO_(x)/SiO_(2)pair in ambient air.The results may help us understand the mechanism of the running-in process of the Si-SiO_(x)/SiO_(2)pair at nanoscale and reduce wear failure in dynamic microelectromechanical systems(MEMS). 关 键 词：NANOTRIBOLOGY friction NANOWEAR running-in process silicon atomic force microscope
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