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Achieving a sub-10 nm nanopore array in silicon by metal-assisted chemical etching and machine learning

查看全文 作　　者：Yun [1,2]Chen;Yanhui [1]Chen;Junyu [1]Long;Dachuang [1]Shi;Xin [1]Chen;Maoxiang [1]Hou;Jian [1]Gao;Huilong [1]Liu;Yunbo [1,3]He;Bi [4]Fan;Ching-Ping [2,5]Wong;Ni [2]Zhao 高影响力作者 机构地区：[1]State Key Laboratory of Precision Electronic Manufacturing Technology and Equipment,School of Electromechnical Engineering,Guangdong University of Technology,Guangzhou 510006,People’s Republic of China;[2]School of Engineering,The Chinese University of Hong Kong,Shatin,Hong Kong;[3]Guangdong ADA Intelligent Equipment Ltd,Foshan 510006,People’s Republic of China;[4]Institute of Business Analysis and Supply Chain Management,College of Management,Shenzhen University,Shenzhen,People’s Republic of China;[5]School of Materials Science and Engineering,Georgia Institute of Technology,Atlanta,GA 30332,United States of America高影响力机构 出　　处：《International Journal of Extreme Manufacturing》索引2021年第3卷第3期,共10页高影响力期刊 基　　金：supported by the National Natural Science Foundation of China[Grant Nos.51975127,U20A6004];the Guangdong-Hong Kong Technology Coopeartion[Grant No.GHP/112/19GD]from Hong Kong Innovation and Technology Commission;Research and Development Program of Guangdong Province[Grant No.2020A0505140008];the Fund of Key-Area Research and Development Program of Guangdong Province[Grant No.2018B090906002]。 摘　　要：Solid-state nanopores with controllable pore size and morphology have huge application potential.However,it has been very challenging to process sub-10 nm silicon nanopore arrays with high efficiency and high quality at low cost.In this study,a method combining metal-assisted chemical etching and machine learning is proposed to fabricate sub-10 nm nanopore arrays on silicon wafers with various dopant types and concentrations.Through a SVM algorithm,the relationship between the nanopore structures and the fabrication conditions,including the etching solution,etching time,dopant type,and concentration,was modeled and experimentally verified.Based on this,a processing parameter window for generating regular nanopore arrays on silicon wafers with variable doping types and concentrations was obtained.The proposed machine-learning-assisted etching method will provide a feasible and economical way to process high-quality silicon nanopores,nanostructures,and devices. 关 键 词：sub-10 nm silicon nanopore array metal-assisted chemical etching silica-coated gold nanoparticles self-assembly machine learning
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