Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes

查看全文 作　　者：Jinchai [1]Li;Na [1]Gao;Duanjun [1]Cai;Wei [1]Lin;Kai [1]Huang;Shuping [1]Li;Junyong [1]Kang

机构地区：[1]Engineering Research Center of Micro-nano Optoelectronic Materials and Devices,Ministry of Education,Fujian Key Laboratory of Semiconductor Materials and Applications,CI center for OSED,College of Physical Science and Technology,Xiamen University,361005 Xiamen,China

出　　处：《Light(Science & Applications)》索引2021年第10卷第7期,共20页

基　　金：supported by the National Key Research and Development Program(2016YFB0400101,2016YFB0400800,and 2016YFB0400903);the NSFC(62074133,61874090,61974124,and 61874091)of China;the Science and Technology Program of Fujian Province(2021H0001);the Key scientific and technological Program of Xiamen(3502Z20191016 and 3502ZCQ20191001)。 摘　　要：As demonstrated during the COVID-19 pandemic,advanced deep ultraviolet(DUV)light sources(200–280 nm),such as AlGaN-based light-emitting diodes(LEDs)show excellence in preventing virus transmission,which further reveals their wide applications from biological,environmental,industrial to medical.However,the relatively low external quantum efficiencies(mostly lower than 10%)strongly restrict their wider or even potential applications,which have been known related to the intrinsic properties of high Al-content AlGaN semiconductor materials and especially their quantum structures.Here,we review recent progress in the development of novel concepts and techniques in AlGaNbased LEDs and summarize the multiple physical fields as a toolkit for effectively controlling and tailoring the crucial properties of nitride quantum structures.In addition,we describe the key challenges for further increasing the efficiency of DUV LEDs and provide an outlook for future developments. 关键词：DIODES ALGAN ULTRAVIOLET

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Multiple fields manipulation on nitride material structures in ultraviolet light-emitting diodes

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