Nanomeshed Si nanomembranes

查看全文 作　　者：Xun [1]Han;Kyung Jin [1]Seo;Yi [1]Qiang;Zeping [1]Li;Sandra [2]Vinnikova;Yiding [1]Zhong;Xuanyi [1]Zhao;Peijie [1]Hao;Shuodao [2]Wang;Hui [1]Fang

机构地区：[1]Department of Electrical and Computer Engineering,Northeastern University,Boston,MA 02115,USA;[2]School of Mechanical and Aerospace Engineering,Oklahoma State University,Stillwater,OK 74074,USA

出　　处：《npj Flexible Electronics》索引2019年第3卷第1期,共8页

基　　金：This work was supported by Northeastern University(NU). 摘　　要：One of the main challenges in stretchable electronics is to achieve high-performance stretchable semiconductors. Here, weintroduce an innovative concept of nanomeshed semiconductor nanomembrane which can be regarded almost as intrinsicallystretchable to conventional microelectronic layouts. By making a silicon film into homogeneous nanomeshes with spring-like nanotraces, we demonstrated a high electron mobility of 50 cm^(2)/V·s, and moderate stretchability with a one-time strain of 25% andcyclic strain of 14% after stretching for 1000 cycles, further improvable with optimized nanomesh designs. A simple analytic modelcovering both fractional material and trace sidewall surfaces well predicted the transport properties of the normally on siliconnanomesh transistors, enabling future design and optimizations. Besides potential applications in stretchable electronics, thissemiconductor nanomesh concept provides a new platform for materials engineering and is expected to yield a new family ofstretchable inorganic materials having tunable electronic and optoelectronic properties with customized nanostructures. 关键词：STRETCHING INORGANIC FRACTIONAL

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Nanomeshed Si nanomembranes

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