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Intrinsic polarization coupling in 2Dα‐In_(2)Se_(3)toward artificial synapse with multimode operations

查看全文 作　　者：Jing [1]Gao;Yue [1]Zheng;Wei [2]Yu;Yanan [1]Wang;Tengyu [1]Jin;Xuan [1]Pan;Kian Ping [2,3]Loh;Wei [1,2,3,4]Chen 高影响力作者 机构地区：[1]Department of Physics,National University of Singapore,Singapore,Singapore;[2]Department of Chemistry,National University of Singapore,Singapore,Singapore;[3]Joint School of National University of Singapore and Tianjin University,International Campus of Tianjin University,Fuzhou,China;[4]National University of Singapore(Suzhou)Research Institute,Suzhou,China高影响力机构 出　　处：《SmartMat》索引2021年第2卷第1期,共11页高影响力期刊 基　　金：Ministry of Education—Singapore,Grant/Award Number:MOE‐2019‐T2‐1‐002;National Natural Science Foundation of China,Grant/Award Numbers:21872100,U2032147;Agency for Science,Technology and Research,Grant/Award Numbers:A1938c0035,A20G9b0135。 摘　　要：Emulation of advanced synaptic functions of the human brain with electronic devices contributes an important step toward constructing high‐efficiency neuromorphic systems.Ferroelectric materials are promising candidates as synaptic weight elements in neural network hardware due to their controllable polarization states.However,the increased depolarization field at the na-noscale and the complex fabrication process of the traditional ferroelectric materials hamper the development of high‐density,low‐power,and highly sensitive synaptic devices.Here,we report the implementation of two‐dimensional(2D)ferroelectricα‐In_(2)Se_(3)as an active channel material to emulate typical synaptic functions.Theα‐In_(2)Se_(3)‐based synaptic device fea-tures multimode operations,enabled by the coupled ferroelectric polarization under various voltage pulses applied at both drain and gate terminals.Moreover,the energy consumption can be reduced to~1 pJ by using high‐κdielectric(Al2O3).The successful control of ferroelectric polarizations inα‐In_(2)Se_(3)and its application in artificial synapses are expected to inspire the implementation of 2D ferroelectric materials for future neuromorphic systems. 关 键 词：2D ferroelectrics artificial synapse high‐κdielectric multimode operations α‐In_(2)Se_(3)
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