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Reconfigurable photovoltaic effect for optoelectronic artificial synapse based on ferroelectric p-n junction

查看全文 作　　者：Yanrong [1,4,5]Wang;Feng [1,3]Wang;Zhenxing [1,3,4]Wang;Junjun [1,3]Wang;Jia [1,3]Yang;Yuyu [1,4,5]Yao;Ningning [1,4,5]Li;Marshet Getaye [1]Sendeku;Xueying [1]Zhan;Congxin [6]Shan;Jun [2]He 高影响力作者 机构地区：[1]CAS Center for Excellence in Nanoscience,CAS Key Laboratory of Nanosystem and Hierarchical Fabrication,National Center for Nanoscience and Technology,Beijing,100190,China;[2]Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education,School of Physics and Technology,Wuhan University,Wuhan,430072,China;[3]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing,100049,China;[4]Sino-Danish college,University of Chinese Academy of Sciences,Beijing,100049,China;[5]Sino-Danish Centre for Education and Research,Beijing,100049,China;[6]School of Physics and Engineering,Zhengzhou University,Zhengzhou,450001,China高影响力机构 出　　处：《Nano Research》索引2021年第14卷第11期,共8页高影响力期刊 基　　金：This work was supported by the National Key R&D Program of China(Nos.2018YFA0703700 and 2016YFA0200700);the National Natural Science Foundation of China(Nos.91964203,61625401,61851403,61974036,61804146,and 61804035);the strategic Priority Research Program of Chinese Academy of Sciences(Grant No.XDB30000000);CAS Key Laboratory of Nanosystem and Hierarchical Fabrication.The authors also gratefully acknowledge the support of Youth Innovation Promotion Association CAS. 摘　　要：Neuromorphic machine vision has attracted extensive attention on wide fields.However,both current and emerging strategies still suffer from power/time inefficiency,and/or low compatibility,complex device structure.Here we demonstrate a driving-voltage-free optoelectronic synaptic device using non-volatile reconfigurable photovoltaic effect based on MoTe_(2)/α-In_(2)Se_(3) ferroelectric p-n junctions.This function comes from the non-volatile reconfigurable built-in potential in the p-n junction that is related to the ferroelectric polarization inα-In_(2)Se_(3).Reconfigurable rectification behavior and photovoltaic effect are demonstrated firstly.Notably,the figure-of-merits for photovoltaic effect like photoelectrical conversion efficiency non-volatilely increases more than one order.Based on this,retina synapse-like vision functions are mimicked.Optoelectronic short-term and long-term plasticity,as well as basic neuromorphic learning and memory rule are achieved without applying driving voltage.Our work highlights the potential of ferroelectric p-n junctions for enhanced solar cell and low-power optoelectronic synaptic device for neuromorphic machine vision. 关 键 词：ferroelectric p-n junction reconfigurable rectification reconfigurable PV effect optoelectronic synaptic devices
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