Multiple-quantum-well-induced unipolar carrier transport multiplication in AlGaN solar-blind ultraviolet photodiode

查看全文 作　　者：LONG [1,2]GUO;KE [1,2]JIANG;XIAOJUAN [1,2]SUN;ZIHUI [1,3]ZHANG;JIANWEI [1,2]BEN;YUPING [1,2]JIA;YONG [1,2]WANG;DABING [1,2]LI

机构地区：[1]State Key Laboratory of Luminescence and Applications,Changchun Institute of Optics,Fine Mechanics and Physics,Chinese Academy of Sciences,Changchun 130033,China;[2]Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China;[3]Key Laboratory of Electronic Materials and Devices of Tianjin,School of Electronics and Information Engineering,Hebei University of Technology,Tianjin 300401,China

出　　处：《Photonics Research》索引2021年第9卷第10期,共9页

基　　金：Natural Science Foundation for Distinguished Young Scholars of China(61725403);National Natural Science Foundation of China(61827813,61922078,62004196);Youth Innovation Promotion Association of the Chinese Academy of Sciences(Y201945);Youth Talent Promotion Project of the Chinese Institute of Electronics(2020QNRC001);Key-Area Research and Development Program of Suzhou Institute of Nano-Tech and Nano-Bionics(20YZ10). 摘　　要：AlGaN solar-blind ultraviolet(SBUV)detectors have potential application in fire monitoring,corona discharge monitoring,or biological imaging.With the promotion of application requirements,there is an urgent demand for developing a high-performance vertical detector that can work at low bias or even zero bias.In this work,we have introduced a photoconductive gain mechanism into a vertical AlGaN SBUV detector and successfully realized it in a p-i-n photodiode via inserting a multiple-quantum-well(MQW)into the depletion region.The MQW plays the role of trapping holes and increasing carrier lifetime due to its strong hole confinement effect and quantum confinement Stark effect.Hence,the electrons can go through the detector multiple times,inducing unipolar carrier transport multiplication.Experimentally,an AlGaN SBUV detector with a zero-bias peak responsivity of about 0.425 A/W at 233 nm is achieved,corresponding to an external quantum efficiency of 226%,indicating the existence of internal current gain.When compared with the device without MQW structure,the gain is estimated to be about 103 in magnitude.The investigation provides an alternative and effective approach to obtain high current gain in vertical AlGaN SBUV detectors at zero bias. 关键词：ALGAN quantum ULTRAVIOLET

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Multiple-quantum-well-induced unipolar carrier transport multiplication in AlGaN solar-blind ultraviolet photodiode

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