GeSnOI mid-infrared laser technology

查看全文 作　　者：Binbin [1]Wang;Emilie [1]Sakat;Etienne [1]Herth;Maksym [1]Gromovyi;Andjelika [1]Bjelajac;Julien [1]Chaste;Gilles [1]Patriarche;Philippe [2]Boucaud;Frédéric [3]Boeuf;Nicolas [4]Pauc;Vincent [4]Calvo;Jérémie [4]Chrétien;Marvin [5]Frauenrath;Alexei [5]Chelnokov;Vincent [5]Reboud;Jean-Michel [5]Hartmann;Moustafa El [1]Kurdi 机构地区：[1]UniversitéParis-Saclay,CNRS,C2N,10 boulevard Thomas Gobert,91120 Palaiseau,France;[2]UniversitéCôte d’Azur,CNRS,CRHEA,Rue Bernard Grégory,06905 Sophia-Antipolis,France;[3]STMicroelectronics,Rue Jean Monnet,38054 Crolles,France;[4]UniversitéGrenoble Alpes,CEA,IRIG-DePhy,17 rue des Martyrs,38000 Grenoble,France;[5]UniversitéGrenoble Alpes,CEA,Leti,17 rue des Martyrs,38000 Grenoble,France 出　　处：《Light(Science & Applications)》索引2021年第10卷第12期,共13页 基　　金：This work was supported by the French RENATECH network,the French National Research Agency(Agence Nationale de la Recherche,ANR)through funding of the ELEGANTE project(ANR-17-CE24-0015);B.W.was supported by Nano2022 IPCEI project with STMicroelectronics. 摘　　要：GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing.Indeed,Sn alloying and tensile strain can transform them into direct bandgap semiconductors.This growing laser technology however suffers from a number of limitations,such as poor optical confinement,lack of strain,thermal,and defects management,all of which are poorly discussed in the literature.Herein,a specific GeSn-on-insulator(GeSnOI)stack using stressor layers as dielectric optical claddings is demonstrated to be suitable for a monolithically integration of planar Group-IV semiconductor lasers on a versatile photonic platform for the near-and mid-infrared spectral range.Microdisk-shape resonators on mesa structures were fabricated from GeSnOI,after bonding a Ge_(0.9)Sn_(0.1) alloy layer grown on a Ge strain-relaxed-buffer,itself on a Si(001)substrate.The GeSnOI microdisk mesas exhibited significantly improved optical gain as compared to that of conventional suspended microdisk resonators formed from the as-grown layer.We further show enhanced vertical out-coupling of the disk whispering gallery mode in-plane radiation,with up to 30%vertical out-coupling efficiency.As a result,the GeSnOI approach can be a valuable asset in the development of silicon-based mid-infrared photonics that combine integrated sources in a photonic platform with complex lightwave engineering. 关 键 词：GeSn OI COUPLING