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Enhanced energy-storage density and temperature stability of Pb_(0.89)La_(0.06)Sr_(0.05)(Zr_(0.95)Ti_(0.05))O_(3) anti-ferroelectric thin film capacitor

查看全文 作　　者：Zhenhua [1]Tang;Songcheng [1]Hu;Dijie [1]Yao;Zeli [1]Li;Zhigang [1]Liu;Xiaobin [1]Guo;Biao [2]Lu;Jingmin [3]Fan;Xin-Gui [1]Tang;Sheng-Guo [2]Lu;Ju [4]Gao 高影响力作者 机构地区：[1]School of Physics and Optoelectric Engineering,Guangdong University of Technology,Guangzhou Higher Education Mega Center,Guangzhou,510006,China;[2]Guangdong Provincial Key Laboratory of Functional Soft Condensed Matter,School of Materials and Energy,Guangdong University of Technology,Guangzhou,510006,China;[3]School of Automation,Guangdong University of Technology,Guangzhou,510006,China;[4]Department of Physics,The University of Hong Kong,Pokfulam Road,Hong Kong,China高影响力机构 出　　处：《Journal of Materiomics》索引2022年第8卷第1期,共8页高影响力期刊 基　　金：financially supported by National Natural Science Foundation of China(NSFC)(Grant Nos.51702055,62073084,11904056,and 51604087);the Guangdong Provincial Natural Science Foundation of China(Grant No.2016A030313718);the Science and Technology Program of Guangdong Province of China(Grant Nos.2016A010104018 and 2017A010104022);Special Funds for the Cultivation of Guangdong College Students’Scientific and Technological Innovation(Climbing Program Special Funds,Grant No.pdjh2020a0174,pdjh2019a0147). 摘　　要：As the fundamental energy storage components in electronic systems,dielectric capacitors with high power densities were demanded.In this work,the anti-ferroelectric Pb_(0.89)La_(0.06)Sr_(0.05)(Zr_(0.95)Ti_(0.05))O_(3)(PLSZT)ceramics and thin film capacitor were successfully fabricated by a solid-state reaction route and pulsed laser deposition method,respectively.The ferroelectric,dielectric,energy-storage properties,and temperature stability of anti-ferroelectric PLSZT capacitor were investigated in detail.By compared with the PLSZT ceramic(energy storage density is 1.29 J/cm^(3) with an efficiency of 78.7%under 75 kV/cm),the anti-ferroelectric PLSZT thin film capacitors exhibited the enhanced energy storage density of 52.6 J/cm^(3) with efficiency of 67.7%under an electric field as high as 2068.9 kV/cm,and the enhanced energy-storage temperature stabilities from room temperature(RT)to more than 200℃ were demonstrated,and the oxygen defects mechanism and size effect were discussed.Moreover,the fast charging(~0.05 μs)and discharging(~0.15 μs)time were certified for the anti-ferroelectric PLSZT film capacitor.These findings broaden the horizon for PLSZT anti-ferroelectrics in high energy storage properties and show promising for manufacturing pulse power capacitor. 关 键 词：PLSZT anti-Ferroelectrics Pulsed laser deposition(PLD) Ferroelectric/dielectric properties Energy storage Temperature stability
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