维普中文期刊产品整合服务

Tungsten oxide thin films for highly sensitive triethylamine detection

查看全文 作  者:Guanglu [1]Lei;Zishuo [1]Li;Guocai [1]Lu;Jinyuan [1]Hu;Haochuan [1]Shang;Xiaolei [1]Zhang;Xianghong [1,2]Liu;Jun [1]Zhang;Xiangxin [1]Guo 高影响力作者 机构地区:[1]College of Physics,Center for Marine Observation and Communications,Qingdao University,Qingdao,266071,China;[2]Key Laboratory of Advanced Energy Materials Chemistry(Ministry of Education),Nankai University,Tianjin,300071,China高影响力机构 出  处:《Journal of Materiomics》索引2022年第8卷第2期,共9页高影响力期刊 基  金:This work is financially supported by the National Natural Sci-ence Foundation of China(No.51972182and 61971252);the Shan-dong Provincial Natural Science Foundation(ZR2020JQ27);the Youth Innovation Team Project of Shandong Provincial Education Department(2020KJN015). 摘  要:Metal oxide semiconductor(MOS)thin films are promising sensing layer for integration in gas sensor devices for detecting toxic and harmful molecules.Herein,tungsten oxide(WO_(3))thin films are deposited on interdigital electrodes by vacuum thermal evaporation to realize batch fabrication of high-performance gas sensors.Subsequent annealing at different temperatures allows for regulation of the concentration of oxygen vacancies in the WO_(3) films,which has been found to exert a great influence on the sensor properties.In addition,the surface structure of WO_(3) films is also highly dependent on the annealing temperature.Gas sensing investigations show that the WO_(3) sensor annealed at 500℃ pos-sesses the best sensing properties for detecting triethylamine(TEA)including very high response,good selectivity,fast response,and low limit of detection(63 ppb).The excellent sensor performances are attributed to the enhanced adsorption of oxidative oxygen species due to the presence of abundant oxygen vacancies.The scalable fabrication of WO_(3) thin film gas sensors and the oxygen vacancy engi-neering strategy proposed herein may shed some light to developing high performance environmental sensors. 关 键 词:Thin film Tungsten oxide Thermal evaporation Oxygen vacancy Gas sensor
相关文献

参考文献(57)

引证文献(1)

耦合文献(25)

网站首页 | 关于我们 | 联系我们 | 产品服务 | 客服中心 | 广告服务 | 版权声明 | 网站联盟 | 友情链接 | 售卡网点

版权所有© 渝B2-20050021-1 渝公网安备 50019002500403号 违法和不良信息举报中心

互联网出版许可证 新出网证(渝)字10号 全国400电话 - 免长途话费